KINETICS OF THE GENERATION AND ANNEALING OF DEEP DEFECTS AND RECOMBINATION CENTERS IN AMORPHOUS-SILICON

被引：33

作者：

SHEPARD, K ^{[1
]}

SMITH, ZE ^{[1
]}

ALJISHI, S ^{[1
]}

WAGNER, S ^{[1
]}

机构：

[1] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08544

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 17期

关键词：

D O I：

10.1063/1.99937

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1644 / 1646

页数：3

共 24 条

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[8] EQUILIBRIUM TEMPERATURE AND RELATED DEFECTS IN INTRINSIC GLOW-DISCHARGE AMORPHOUS-SILICON [J].

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[9] DEFECT DYNAMICS AND THE STAEBLER-WRONSKI EFFECT IN HYDROGENATED AMORPHOUS-SILICON [J].

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