EFFECT OF GASEOUS AMBIENTS UPON 1/F NOISE IN GERMANIUM FILAMENTS

被引：12

作者：

NOBLE, VE

THOMAS, JE

机构：

来源：

关键词：

D O I：

10.1063/1.1728422

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1709 / &

共 9 条

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[3]

BRATTAIN WH, 1953, AT&T TECH J, V32, P1

[4]

MACRAE AU, 1960, PHYS REV, V119, P62

[5]

MCWHORTER AL, 1955, DISSERTATION

[6]

MCWHORTER AL, 1957, SEMICONDUCTOR SURFAC, P207, DOI DOI 10.1063/1.3060496

[7]

NOBLE VE, 1960, DISSERTATION

[8]

PETRITZ RL, 1957, SEMICONDUCTOR SURFAC, P226

[9] EFFECTIVE CARRIER MOBILITY IN SURFACE-SPACE CHARGE LAYERS [J].

SCHRIEFFER, JR .

PHYSICAL REVIEW, 1955, 97 (03) :641-646