2-PHOTON ABSORPTION IN ZINCBLENDE SEMICONDUCTORS

被引：111

作者：

PIDGEON, CR

WHERRETT, BS

JOHNSTON, AM

DEMPSEY, J

MILLER, A

机构：

[1] Department of Physics, Heriot-Watt University, Edinburgh

来源：

PHYSICAL REVIEW LETTERS | 1979年 / 42卷 / 26期

关键词：

D O I：

10.1103/PhysRevLett.42.1785

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

It is shown that a three-band, nonparabolic, model for zinc-blende semiconductors provides a universal curve for the frequency dependence of the two-photon coefficient, whose magnitude differs between semiconductors by the factor (Eg np32)-1. Good agreement is obtained with reported coefficients at 300°K for InSb, Hg1-xCdxTe, GaAs, and CdTe. © 1979 The American Physical Society.

引用

页码：1785 / 1788

页数：4

共 12 条

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