INTERFACE BETWEEN Y-BA-CU-O THIN-FILM AND CUBIC ZIRCONIA SUBSTRATE

被引：45

作者：

HWANG, DM ^{[1
]}

YING, QY ^{[1
]}

KWOK, HS ^{[1
]}

机构：

[1] SUNY BUFFALO,INST SUPERCOND,BUFFALO,NY 14260

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 21期

关键词：

D O I：

10.1063/1.104863

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interface between laser deposited Y-Ba-Cu-O thin films and yttria-stabilized cubic zirconia substrates was studied using high-resolution transmission electron microscopy and in situ resistivity measurements. It was found that a approximately 5nm layer of low resistivity compound was formed at the interface, at a substrate temperature of approximately 650-degrees-C. This result is qualitatively different from other substrates such as SrTiO3 and MgO, where the interface compounds are high resistivity oxides. This in situ Y-Ba-Cu-O thin film is superconducting with a T(c) of 88 K and a J(c) of 2 x 10(6) A/cm2 at 77 K.

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页码：2429 / 2431

页数：3

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