SOME ELECTRICAL PROPERTIES OF AGGAS2

被引：19

作者：

YU, PW ^{[1
]}

MANTHURU.J ^{[1
]}

PARK, YS ^{[1
]}

机构：

[1] USAF,AEROSP RES LABS,WRIGHT PATTERSON AFB,OH 45433

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 08期

关键词：

D O I：

10.1063/1.1663842

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3694 / 3696

页数：3

共 9 条

[1]

BOYD GD, 1971, IEE J QUANTUM ELECTR, VQE 7, P563

[2]

Hanna D.C., 1973, OPT COMMUN, V8, P151

[3]

SCHWARTZ C, 1972, OPT COMMUN, V5, P244

[4] ELECTROREFLECTANCE AND ABSORPTION-EDGE STUDIES OF AGGAS2 AND AGGASE2 [J].

TELL, B ;

SHAY, JL ;

KASPER, HM .

PHYSICAL REVIEW B-SOLID STATE, 1972, 6 (08) :3008-+

[5] ROOM-TEMPERATURE ELECTRICAL PROPERTIES OF 10 I-III-VI2 SEMICONDUCTORS [J].

TELL, B ;

SHAY, JL ;

KASPER, HM .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) :2469-&

[6] OPTICAL AND ELECTRICAL PROPERTIES OF AGGAS2 AND AGGASE2 [J].

TELL, B ;

KASPER, HM .

PHYSICAL REVIEW B, 1971, 4 (12) :4455-&

[7]

WOODBURY HH, 1967, PHYSICS CHEMISTRY 2

[8] SHARP-LINE AND BROAD-BAND EMISSION IN AGGAS2 CRYSTALS [J].

YU, PW ;

PARK, YS .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) :823-827

[9]

YU PY, UNPUBLISHED

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