CHARACTERIZATION OF HIGHLY-ZINC-DOPED INP CRYSTALS

被引：51

作者：

MAHAJAN, S

BONNER, WA

CHIN, AK

MILLER, DC

机构：

[1] Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 02期

关键词：

D O I：

10.1063/1.91067

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly-zinc-doped InP crystals, grown along the 〈111〉 direction by the liquid-encapsulated Czochralski technique, have been characterized by x-ray topography, transmission cathodoluminescence, and transmission electron microscopy. It is observed that high zinc doping improves the perfection of crystals insofar as dislocations are concerned. However, not all of the dopant atoms are in solid solution, and it appears that some have clustered to form a high density (∼4×108 cm-2) of fine precipitates with an average size of ∼675 Å.

引用

页码：165 / 168

页数：4

共 21 条

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