TRANSMISSION SILICON PHOTOEMITTERS AND ELECTRON MULTIPLIERS

被引：12

作者：

HOWORTH, JR ^{[1
]}

FOLKES, JR ^{[1
]}

PALMER, IC ^{[1
]}

机构：

[1] ENGLISH ELECT VALVE CO LTD,CHELMSFORD CM1 2QU,ESSEX,ENGLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1976年 / 9卷 / 05期

关键词：

D O I：

10.1088/0022-3727/9/5/011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：785 / 794

页数：10

共 16 条

[1]

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[7] SECONDARY-ELECTRON EMISSION FROM GAAS [J].

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HOLT, SL ;

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APPLIED PHYSICS LETTERS, 1972, 21 (06) :249-+

[8] HIGH-SENSITIVITY TRANSMISSION-MODE GAAS PHOTOCATHODE [J].

GUTIERREZ, WA ;

POMMERRENIG, HD .

APPLIED PHYSICS LETTERS, 1973, 22 (06) :292-293

[9] THERMIONIC EMISSION FROM NEGATIVE ELECTRON AFFINITY SILICON [J].

HOWORTH, JR ;

SHEPPARD, CJ ;

HOLTOM, R ;

HARMER, AL .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :151-157

[10] CALCULATION OF MINORITY-CARRIER CONFINEMENT PROPERTIES OF III-V SEMICONDUCTOR HETEROJUNCTIONS (APPLIED TO TRANSMISSION-MODE PHOTOCATHODES) [J].

JAMES, LW .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) :1326-1335

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