ON THE MECHANISMS OF STRAIN RELEASE IN MOLECULAR-BEAM-EPITAXY-GROWN INXGA1-XAS/GAAS SINGLE HETEROSTRUCTURES

被引:114
作者
DRIGO, AV
AYDINLI, A
CARNERA, A
GENOVA, F
RIGO, C
FERRARI, C
FRANZOSI, P
SALVIATI, G
机构
[1] UNIV PADUA,CNR,GRP NAZL STRUTTURA MAT,DIPARTIMENTO FIS,I-35131 PADUA,ITALY
[2] CTR STUDI & LAB TELECOMUN SPA,I-10148 TURIN,ITALY
[3] CNR,IST MAT SPECIALI ELETTRON & MAGNETISMO,I-43100 PARMA,ITALY
关键词
D O I
10.1063/1.344335
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1975 / 1983
页数:9
相关论文
共 36 条
[1]   GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].
ADACHI, S .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29
[2]   VARIATION OF THE CRITICAL LAYER THICKNESS WITH IN CONTENT IN STRAINED INX GA1-XAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].
ANDERSSON, TG ;
CHEN, ZG ;
KULAKOVSKII, VD ;
UDDIN, A ;
VALLIN, JT .
APPLIED PHYSICS LETTERS, 1987, 51 (10) :752-754
[3]  
AYDINLI A, 1988, I PHYS C SER, V91, P331
[4]  
AYDINLI A, 1987 EUR MAT RES SOC, V16, P193
[5]  
BALL CAB, 1983, DISLOCATIONS SOLIDS
[6]  
CARNERA A, UNPUB
[7]  
COCITO M, 1986, SCANNING ELECTRON MI, V4, P1289
[8]   INTERCOMPARISON OF ABSOLUTE STANDARDS FOR RBS STUDIES [J].
COHEN, C ;
DAVIES, JA ;
DRIGO, AV ;
JACKMAN, TE .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3) :147-148
[9]   ATOMISTIC MONTE-CARLO CALCULATION OF CRITICAL LAYER THICKNESS FOR COHERENTLY STRAINED SILICON-LIKE STRUCTURES [J].
DODSON, BW ;
TAYLOR, PA .
APPLIED PHYSICS LETTERS, 1986, 49 (11) :642-644
[10]   RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J].
DODSON, BW ;
TSAO, JY .
APPLIED PHYSICS LETTERS, 1987, 51 (17) :1325-1327