CHARACTERIZATION OF BETA-SIC SURFACES AND THE AU/SIC INTERFACE

被引：92

作者：

MIZOKAWA, Y

GEIB, KM

WILMSEN, CW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573958

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1696 / 1700

页数：5

共 28 条

[1] AUGER AND ELECTRON ENERGY-LOSS STUDY OF THE PD/SIC INTERFACE AND ITS DEPENDENCE ON OXIDATION [J].

BERMUDEZ, VM .

APPLICATIONS OF SURFACE SCIENCE, 1983, 17 (01) :12-22

[2] AUGER AND ELECTRON ENERGY-LOSS STUDY OF THE AL/SIC INTERFACE [J].

BERMUDEZ, VM .

APPLIED PHYSICS LETTERS, 1983, 42 (01) :70-72

[3] EARLY STAGES OF OXYGEN-ADSORPTION ON SILICON SURFACES AS SEEN BY ELECTRON-SPECTROSCOPY [J].

CARRIERE, B ;

DEVILLE, JP .

SURFACE SCIENCE, 1979, 80 (01) :278-286

[4]

CHANG CC, 1975, SURF SCI, V40, P9

[5]

DAYAN M, 1985, J VAC SCI TECHNOL A, V3, P361, DOI 10.1116/1.573221

[6]

GEIB KH, UNPUB

[7] EFFECTS OF A THIN SIO2 LAYER ON THE FORMATION OF METAL-SILICON CONTACTS [J].

GOODNICK, SM ;

FATHIPOUR, M ;

ELLSWORTH, DL ;

WILMSEN, CW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :949-954

[8]

HASS TW, 1972, J APPL PHYS, V43, P1853

[9] ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS [J].

HIRAKI, A ;

SHUTO, K ;

KIM, S ;

KAMMURA, W ;

IWAMI, M .

APPLIED PHYSICS LETTERS, 1977, 31 (09) :611-612

[10]

HOOKER MP, 1976, SURF SCI, V33, P741

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