ELECTROABSORPTION AND REFRACTION IN FABRY-PEROT QUANTUM-WELL MODULATORS - A GENERAL DISCUSSION

被引:20
作者
BOYD, GD [1 ]
LIVESCU, G [1 ]
机构
[1] AT&T BELL LABS, CTR SOLID STATE TECHNOL, BREINIGSVILLE, PA 18031 USA
关键词
D O I
10.1007/BF00625821
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Fabry-Perot resonators have long been advocated to improve the limited contrast ratio of multiple quantum well optical modulators used in photonic switches based on self electrooptic effect devices (SEEDs) and in other array based optical interconnection schemes. Using data on field dependent GaAs/AlGaAs quantum well absorption and refraction, we have modelled the reflectivity, modulation depth and contrast ratio of resonant modulators. Our results are generally valid for any quantum well modulator and demonstrate 23the important role played by electro-refraction even in regions of strong absorption. Resonators give large contrast ratios but there are trade-offs in the maximum reflectivity change achievable with Fabry-Perot resonators compared to simple modulators. The model gives the optimum number of quantum wells and reflectivity values required to make a resonator at any wavelength for a given quantum well structure. Understanding the limits of Fabry-Perot quantum well modulator performance is important for their application in symmetric self electrooptic effectiveness for photonic switching where modulation and detection properties are both used and for optical interconnection systems.
引用
收藏
页码:S147 / S165
页数:19
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