MEASUREMENT OF ALP GAP (001) HETEROJUNCTION BAND OFFSETS BY X-RAY PHOTOEMISSION SPECTROSCOPY

被引：20

作者：

WALDROP, JR

GRANT, RW

KRAUT, EA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 04期

关键词：

D O I：

10.1116/1.586491

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

X-ray photoemission spectroscopy has been used to measure the valence band offset DELTAE(v) for the AlP/GaP (001) heterojunction interface. The heterojunction samples were prepared by molecular-beam epitaxy. A value of DELTAE(v)=0.43 eV is obtained (staggered band alignment, with AlP valence band below that of GaP).

引用

页码：1617 / 1620

页数：4

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