Fabrication of silicon field emitter arrays with o.1-mu m-diameter gate by focused ion beam lithography

被引：7

作者：

Yamaoka, Y ^{[1
]}

Goto, T ^{[1
]}

Nakao, M ^{[1
]}

Kanemaru, S ^{[1
]}

Itoh, J ^{[1
]}

机构：

[1] ELECTROTECH LAB, TSUKUBA, IBARAKI 305, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 12B期

关键词：

vacuum microelectronics; field emission; silicon; field emitter; operating voltage; gate diameter; focused ion beam (FIB);

D O I：

10.1143/JJAP.34.6932

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cone-shaped silicon (Si) field-emitter arrays (FEAs) with 0.1-mu m-diameter gates were fabricated by focused ion beam (FIB) lithography. In the fabrication process, a 200keV Be2+ FIB with a beam diameter of 0.06 mu m was irradiated to a positive-tone electron-beam resist to form an array of silicon oxide (SiOx) disks used as masks for cone-shape etching of a Si substrate. We have succeeded in the operation of the present FEA and obtained the emission current of 1 nA/tip at the gate voltage of 25 V.

引用

页码：6932 / 6934

页数：3

共 6 条

[1] Spindt C.A., J. Appl. Phys, 39, (1968)
[2] Betsui K., Tech. Dig. IVMC91, (1991)
[3] Stephani D., Peters D., Barsch W., Spindt C.A., Holland C.E., Tech. Dig. IVMC92, (1992)
[4] Bozler C.O., Harris C.T., Rabe S., Rathman D.D., Hollis M.A., Smith H.I., J. Vac. Sei. & Technol. B, 12, (1994)
[5] Urayama M., Ise T., Maruo Y., Kishi A., Imamoto R., Takase T., Jpn. J. Appl. Phys, 32, (1993)
[6] Chu W., Yen A., Ismail K., Shepard M.I., Lezec H.J., Musil C.R., Melngailis J., Ku Y.-C., Carter J.M., Smith H.I., J.Vac. Sei. & Technol. B, 7, (1989)

← 1 →