Bonding Nature of Local Structural Motifs in Amorphous GeTe

被引:129
作者
Deringer, Volker L. [1 ]
Zhang, Wei [2 ]
Lumeij, Marck [1 ]
Maintz, Stefan [1 ]
Wuttig, Matthias [3 ,4 ,5 ]
Mazzarello, Riccardo [2 ,4 ,5 ]
Dronskowski, Richard [1 ,4 ,5 ]
机构
[1] Rhein Westfal TH Aachen, Inst Inorgan Chem, D-52056 Aachen, Germany
[2] Rhein Westfal TH Aachen, Inst Theoret Solid State Phys, D-52074 Aachen, Germany
[3] Rhein Westfal TH Aachen, Inst Phys IA, D-52074 Aachen, Germany
[4] Rhein Westfal TH Aachen, Julich Aachen Res Alliance JARA FIT, D-52074 Aachen, Germany
[5] Rhein Westfal TH Aachen, JARA HPC, D-52074 Aachen, Germany
关键词
bond theory; crystal orbital overlap populations; molecular dynamics; phase-change materials; resistance drift; PHASE-CHANGE MATERIALS; DENSITY-FUNCTIONAL CALCULATIONS; AUGMENTED-WAVE METHOD; PLANE-WAVE; SOLIDS; PSEUDOPOTENTIALS; PROJECTION; VACANCIES; DYNAMICS; COHP;
D O I
10.1002/anie.201404223
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Despite its simple chemical constitution and unparalleled technological importance, the phase-change material germanium telluride (GeTe) still poses fundamental questions. In particular, the bonding mechanisms in amorphous GeTe have remained elusive to date, owing to the lack of suitable bond-analysis tools. Herein, we introduce a bonding indicator for amorphous structures, dubbed "bond-weighted distribution function" (BWDF), and we apply this method to amorphous GeTe. The results underline a peculiar role of homopolar Ge-Ge bonds, which locally stabilize tetrahedral fragments but not the global network. This atom-resolved (i. e., chemical) perspective has implications for the stability of amorphous "zero bits" and thus for the technologically relevant resistance-drift phenomenon.
引用
收藏
页码:10817 / 10820
页数:4
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