Photon counting for quantum key distribution with Peltier cooled InGaAs/InP APDs

被引：145

作者：

Stucki, Damien ^{[1
]}

Ribordy, Grégoire ^{[1
]}

Stefanov, André ^{[1
]}

Zbinden, Hugo ^{[1
]}

Rarity, John G. ^{[2
]}

Wall, Tom ^{[2
]}

机构：

[1] Group of Applied Physics, University of Geneva, 1211 Geneva 4, Switzerland

[2] S and E Division Defence Evaluation and Research Agency, St. Andrews Rd, Malvern, WR14 3PS, United Kingdom

来源：

| 1967年 / Taylor and Francis Ltd.卷 / 48期

关键词：

Computer simulation - Laser pulses - Optical fibers - Peltier effect - Photodetectors - Photodiodes - Photons - Quantum cryptography - Rayleigh scattering - Semiconducting indium gallium arsenide - Semiconducting indium phosphide - Timing jitter;

D O I：

10.1080/09500340110069246

中图分类号：

学科分类号：

摘要：

The performance of three types of InGaAs/InP avalanche photodiodes is investigated for photon counting at 1550 nm in the temperature range of thermoelectric cooling. The best one yields a dark count probability of 2.8 × 10-5 per gate (2.4 ns) at a detection efficiency of 10% and a temperature of -60°C. The afterpulse probability and the timing jitter are also studied. The results obtained are compared with those of other papers and applied to the simulation of a quantum key distribution system. An error rate of 10% would be obtained after 54 km.

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