Tuning of the Fano effect through a quantum dot in an Aharonov-Bohm interferometer

被引：530

作者：

Kobayashi, Kensuke ^{[1
]}

Aikawa, Hisashi ^{[1
]}

Katsumoto, Shingo ^{[1
]}

Iye, Yasuhiro ^{[1
]}

机构：

[1] Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Chiba 277-8581, Japan

来源：

| 2002年 / American Physical Society卷 / 88期

关键词：

Coulomb blockade - Electric conductance - Electron gas - Electron transport properties - Etching - Fermi level - Heterojunction bipolar transistors - Interferometers - Light interference - Magnetoelectric effects - Semiconductor quantum dots - Tuning;

D O I：

10.1103/PhysRevLett.88.256806

中图分类号：

学科分类号：

摘要：

A tunable Fano system was studied in a quantum dot (QD) in an Aharonov-Bohm interferometer. Delocalization of the discrete levels in the QD due to this effect showed up in the resonating zero-bias peak in the differential conductance. Controlling the Fano line shape by the magnetic field revealed that the Fano parameter will be extended to a complex number.

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