Enhancement of positive temperature coefficient resistance effect of BaTiO3-based semiconducting ceramics caused by B2O3 vapor dopants

被引：16

作者：

Jianquan, Qi ^{[1
]}

Qing, Zhu ^{[1
]}

Yongli, Wang ^{[1
]}

Yajing, Wu ^{[1
]}

Longtu, Li ^{[1
]}

机构：

[1] Department of Materials Science and Engineering, State Key Laboratory of Advanced Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China

来源：

| 2001年 / Elsevier Ltd卷 / 120期

关键词：

Crystal impurities - Doping (additives) - Electric resistance - Electron traps - Grain boundaries - Microstructure - Positive temperature coefficient - Potential energy - Semiconductor materials - Sintering - Thermal effects;

D O I：

10.1016/S0038-1098(01)00440-9

中图分类号：

学科分类号：

摘要：

The effect of doping B2O3 vapor in semiconducting BaTiO3 ceramics was studied. An increase in resistivity at room temperature was reported in the samples. The increase was attributed to the enhancement in the height of a potential energy barrier with temperature. The crystallographic plane was analyzed by x-ray diffraction method.

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