Activation energy - Charge transfer - Chemisorption - Copper - Dissociation - Gas adsorption - Low energy electron diffraction - Molecular beam epitaxy - Oxygen - Plastic deformation - Poisson ratio - Tensile stress - Thin films;
D O I:
10.1103/PhysRevLett.88.256104
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摘要:
The effect of stress on two adsorption processes of oxygen on clean Cu(001) and O-covered Cu(001) surfaces was studied. It was demonstrated that the chemisorption of oxygen was sensitive to uniaxial tensile stress within an elastic limit. It was found that stress enhances the dissociative chemisorption on clean Cu(001) when the translational energy of incident oxygen is below 250 meV and supresses it when the energy is above 250 meV. The effect of external stress on the oxygen dissociation dynamics was found to be different between clean and O-covered surfaces.