Oscillatory characteristic temperature of InAs quantum-dot laser

被引：1

作者：

机构：

[1] Chang, C.-A.

[2] Hwang, F.-C.

[3] Wu, Z.-R.

[4] Wang, P.-Y.

来源：

Chang, C.-A. (changca@walsinusa.com) | 2001年 / Institute of Electrical and Electronics Engineers Inc.卷 / 13期

关键词：

Current density - High temperature effects - Optical communication - Oscillators (electronic) - Semiconducting indium compounds - Semiconductor quantum dots;

D O I：

10.1109/68.942645

中图分类号：

学科分类号：

摘要：

InAs quantum-dot laser showed continuous-wave lasing up to 323 K. A high To of over 1000 K was measured below 130 K. The value of To rapidly declined at higher temperatures, and showed an oscillatory behaviour above 250 K. The oscillatory changes of To were accompanied by alternating change in the light output versus current curves above the threshold, suggesting possible participation of higher state in lasing.

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