Molecular Beam Epitaxial Growth of Single-Crystalline ZnO Films on a-Plane Sapphire Substrates

被引：1

作者：

Koike, Kazuto ^{[1
]}

Komuro, Tomonori ^{[1
]}

Yan, Feng-Ping ^{[1
]}

Ogata, Ken-Ichi ^{[2
]}

Sasa, Shigehiko ^{[1
]}

Inoue, Masataka ^{[1
]}

Yano, Mitsuaki ^{[1
]}

机构：

[1] New Materials Res. Center, Osaka Inst. of Tech., Asahi-ku

[2] Bio Venture Center, Osaka Inst. of Tech., Asahi-ku

来源：

Zairyo/Journal of the Society of Materials Science, Japan | 2003年 / 52卷 / 12期

关键词：

Radical source molecular beam epitaxy; Sapphire substrate; Single crystal; ZnO film;

D O I：

10.2472/jsms.52.1414

中图分类号：

学科分类号：

摘要：

This paper describes radical-source molecular beam epitaxial growth of ZnO films on a-plane sapphire substrates. Reflection high-energy electron diffraction observation and x-ray diffraction measurement show that single-crystalline ZnO (0001) films without any rotational domains are obtained on the sapphire substrates. Photoluminescence spectra measured at 300K exhibit an intense emission peak from free excitons. Hall measurement shows that phonon scattering becomes dominant with increasing temperature and a relatively high electron mobility of ∼ 100 cm2/Vs with a low residual electron density of ∼ 4 × 1017 cm-3 at 300K is achieved.

引用

页码：1414 / 1419

页数：5

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