Effect of rf power on the properties of ITO thin films deposited by plasma enhanced reactive thermal evaporation on unheated polymer substrates

被引：22

作者：

Nunes de Carvalho, C. ^{[1
,2
]}

Luis, A. ^{[1
]}

Conde, O. ^{[4
]}

Fortunato, E. ^{[1
]}

Lavareda, G. ^{[1
,2
]}

Amaral, A. ^{[2
,3
]}

机构：

[1] Departamento de Ciência Dos Materiais, FCT-UNL, Quinta da Torre, 2829-516 Caparica, Portugal

[2] Centro de Física Molecular, Complexo i, IST, Av. Rovisco Pais, 1049-001 Lisbon, Portugal

[3] Departamento de Física, IST, Av. Rovisco Pais, 1049-001 Lisbon, Portugal

[4] Departamento de Física, Faculdade de Ciências, Campo Grande, 1749-016 Lisbon, Portugal

来源：

Journal of Non-Crystalline Solids | 2002年 / 299-302卷

关键词：

Deposition - Electric conductivity - Evaporation - Indium compounds - Morphology - Scanning electron microscopy - Substrates - Surfaces - X ray diffraction;

D O I：

10.1016/S0022-3093(01)01140-1

中图分类号：

学科分类号：

摘要：

The influence of the radiofrequency (rf) deposition power on the properties of indium tin oxide (ITO) thin films deposited onto unheated polymer substrates is studied. The deposition technique used is the radiofrequency plasma enhanced reactive thermal evaporation (rf-PERTE). Results show that (1) the total transmittance at 500 nm is always around 80% and (2) that the electrical resistivity is 10-3 Ω cm for ITO films deposited in the rf power range 45-50 W. X-ray diffraction analysis showed the presence of a crystalline phase. Scanning electron microscopy (SEM) revealed that the surface morphology of the ITO films does not vary significantly with rf power. © 2002 Elsevier Science B.V. All rights reserved.

引用

页码：1208 / 1212