Controlling the electronic structure of bilayer graphene

被引：2843

作者：

Advanced Light Source, Lawrence Berkeley National Laboratory, One Cyclotron Road, Berkeley, CA 94720, United States ^{[1
]}

不详 ^{[2
]}

不详 ^{[3
]}

机构：

[1] Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, One Cyclotron Road

[2] Department of Molecular Physics, Fritz-Haber-Institut, Max-Planck-Gesellschaft, D-14195 Berlin

[3] Institut für Physik der Kondensierten Materie, Universität Erlangen-Nürnberg, D-91058 Erlangen

来源：

Science | 2006年 / 5789卷 / 951-954期

关键词：

Carbon;

D O I：

10.1126/science.1130681

中图分类号：

学科分类号：

摘要：

We describe the synthesis of bilayer graphene thin films deposited on insulating silicon carbide and report the characterization of their electronic band structure using angle-resolved photoemission. By selectively adjusting the carrier concentration in each layer, changes in the Coulomb potential led to control of the gap between valence and conduction bands. This control over the band structure suggests the potential application of bilayer graphene to switching functions in atomic-scale electronic devices.

引用

页码：951 / 954

页数：3

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