Effects of deposition pressure and plasma power on the growth and properties of boron-doped microcrystalline silicon films

被引：9

作者：

Key Laboratory of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052, China ^{[1
]}

不详 ^{[2
]}

不详 ^{[3
]}

机构：

[1] Key Laboratory of Material Physics, Department of Physics, Zhengzhou University

[2] Institute of Plasma Physics, Chinese Academy of Sciences

[3] Depart of Materials Science and Engineering, Wuhan Institute of Technology

来源：

Chin. Phys. | 2008年 / 4卷 / 1394-1399期

关键词：

Boron-doped μc-Si:H films; Dark conductivity; Raman crystallinity; Thin film solar cells;

D O I：

10.1088/1674-1056/17/4/040

中图分类号：

学科分类号：

摘要：

Using diborane as doping gas, p-doped μc-Si:H layers are deposited by using the plasma enhanced chemical vapour deposition (PECVD) technology. The effects of deposition pressure and plasma power on the growth and the properties of μc-Si:H layers are investigated. The results show that the deposition rate, the electrical and the structural properties are all strongly dependent on deposition pressure and plasma power. Boron-doped μc-Si:H films with a dark conductivity as high as 1.42 Ω-1cm-1 and a crystallinity of above 50% are obtained. With this p-layer, μc-Si:H solar cells are fabricated. In addition, the mechanism for the effects of deposition pressure and plasma power on the growth and the properties of boron-doped μc-Si:H layers is discussed. © 2008 Chin. Phys. Soc. and IOP Publishing Ltd.

引用

页码：1394 / 1399

页数：5

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