INJECTION INTERSUBBAND RELAXATION AND RECOMBINATION IN GaAs MULTIPLE QUANTUM WELLS.

被引：61

作者：

Bimberg, D. ^{[1
]}

Christen, J. ^{[1
]}

Steckenborn, A. ^{[1
]}

Weimann, G. ^{[1
]}

Schlapp, W. ^{[1
]}

机构：

[1] Technische Univ Berlin, Inst fuer, Festkoerperphysik, Berlin, West Ger, Technische Univ Berlin, Inst fuer Festkoerperphysik, Berlin, West Ger

来源：

Journal of Luminescence | 1984年 / 30卷 / 1-4期

关键词：

SEMICONDUCTOR DEVICES - Testing - SEMICONDUCTOR MATERIALS - Testing;

D O I：

10.1016/0022-2313(85)90078-X

中图分类号：

学科分类号：

摘要：

Results of continuous excitation, time-delayed and time-resolved cathodoluminescence experiments on undoped and Be-doped GaAs multiple quantum wells of thickness 5-11 nm are reported for temperatures 5-300 K and excitation intensities 1-10**3 W/cm**2. Comparison is made with similar investigations of bulk epitaxial GaAs layers. Increasing structural localization of the carriers is identified to lead to a qualitative change of the type of recombination. Increasingly faster radiative excitonic recombination leads to a bypass of impurity and trap capture processes in undoped as well as in doped material, at low temperatures as well as at room temperature.

引用

页码：562 / 579