EFFECT OF OXYGEN PARTIAL PRESSURE ON THE PROPERTIES OF RF-SPUTTERED Al2O3 THIN FILMS.

被引：13

作者：

Chen, Ga-Lane ^{[1
]}

Sivertsen, J.M. ^{[1
]}

Judy, J.H. ^{[1
]}

机构：

[1] Univ of Minnesota, Dep of Chemical, Engineering & Materials Science,, Minneapolis, MN, USA, Univ of Minnesota, Dep of Chemical Engineering & Materials Science, Minneapolis, MN, USA

来源：

Materials Letters | 1984年 / 2卷 / 03期

关键词：

ALUMINA - Thin Films - ELECTRIC INSULATING MATERIALS - SPUTTERING;

D O I：

10.1016/0167-577X(84)90023-5

中图分类号：

学科分类号：

摘要：

Aluminum oxide thin films are used as insulating and passivating layers in a variety of microelectronic and other applications. RF bias sputtering was used to deposit Al//2O//3 films. The purpose of this paper is to report results of an experimental study of the effect of oxygen partial pressure on properties of RF-sputtered Al//2O//3 thin films. The importance of this factor arises from the degradation of Al//2O//3 film properties due to oxygen deficiency in the film composition.

引用

页码：196 / 201