FABRICATION OF 15 mu m THICK Si-HOLE MASKS FOR DEMAGNIFYING PROJECTION SYSTEMS FOR ION- OR ELECTRON-BEAMS.

被引：3

作者：

Olschimke, J. ^{[1
]}

Rangelow, I.W. ^{[1
]}

Tschudi, T. ^{[1
]}

Kassing, R. ^{[1
]}

机构：

[1] Technische Hochschule Darmstadt, Darmstadt, West Ger, Technische Hochschule Darmstadt, Darmstadt, West Ger

来源：

Microelectronic Engineering | 1987年 / 6卷 / 1-4期

关键词：

ELECTRON BEAMS - ION BEAMS - LITHOGRAPHY - MICROELECTRONICS - SEMICONDUCTING SILICON - Etching;

D O I：

10.1016/0167-9317(87)90086-4

中图分类号：

学科分类号：

摘要：

Sophisticated dry-etching techniques using inhibitor films as sidewall protection have been applied to realize holes in silicon in the micron size and depths of the order of 10-15 mu m. These holes are fabricated in silicon membranes which were produced by wet-etching with KOH. These structures are proposed as stress-free stencil hole masks for demagnifying electron- and ion-beam projection lithography. They show the good thermal conductivity and high mechanical stability of bulk silicon. Besides this, these techniques and structures may find wide application such as masks for deposition methods and MBE, quantitative mechanical filters for chemistry, biology, medicine, and micromechanics.

引用

页码：547 / 552