Protective behaviour against high temperature oxidation of silicon nitride films synthesized by ion-beam-assisted deposition

被引：9

作者：

Chen, Yuanru ^{[1
]}

Liu, Shikai ^{[1
]}

Liu, Xianghuai ^{[1
]}

Zou, Shichang ^{[1
]}

Shang, Zhenkui ^{[1
]}

Xu, Chuntong ^{[1
]}

Zheng, Yan ^{[1
]}

机构：

[1] Southwestern Jiantong Univ, China

来源：

Surface and Coatings Technology | 1992年 / 51卷 / 1-3期

关键词：

Electron beam evaporation - High temperature oxidation - Ion beam assisted deposition;

D O I：

10.1016/0257-8972(92)90243-4

中图分类号：

学科分类号：

摘要：

Silicon nitride films were synthesized on the surface of nickel-based alloys by concurrent electron beam evaporation of silicon and bombardment with 25 keV nitrogen ions (ion-beam-assisted deposition, IBAD). Analyses of X-ray photoelectron and IR spectra reveal that stoichiometric Si3N4 films are formed by IBAD. Transmission electron microscopy observations show that IBAD Si3N4 films normally have amorphous structure; selected area diffraction, however, reveals some crystallinity. An analysis of Auger electron spectroscopy profiles shows that the Si3N4 film consists of a silicon-enriched layer on the outer surface, an Si3N4 layer with uniform composition, and a mixed layer at the film-substrate interface. Isothermal oxidation tests were carried out on the uncoated nickel-based alloy specimens and those coated with films of thicknesses up to 1 μm at 1173 K, 1273 K, and 1373 K in air for 8-20 h. The oxidation mode initially follows an approximately linear trend and later approaches a parabolic trend. The films of Si3N4 decrease the thermal oxidation rates considerably. X-ray diffraction analysis of the oxidation products shows that there exist five phases, Cr2O3, SiO2, NiCr2O4, Al2O3 and Ni3Si.

引用

页码：227 / 231