CADMIUM IMPLANTED GALLIUM ARSENIDE - A STUDY OF RESIDUAL BOMBARDMENT DISORDER AND ATOM LOCATION.

被引：4

作者：

Ilic, G. ^{[1
,3
]}

Ewan, G.T. ^{[1
]}

Whitton, J.L. ^{[2
]}

机构：

[1] Physics Department, Queen's University, Kingston,ON, Canada

[2] Chalk River Nuclear Laboratories, Atomic Energy of Canada Limited, Chalk River,ON, Canada

[3] Anatek Electronics Limited, 1820 Pandora St., Vancouver 6,BC, Canada

来源：

| 1600年 / 18期

关键词：

D O I：

10.1080/00337577308234716

中图分类号：

学科分类号：

摘要：

The influence of specimen temperature on residual bombardment induced damage and atom location has been studied for 40 keV Cd implanted into left brace 111 right brace GaAs at doses from 1 to 4 multiplied by 10**1**4 ions/cm**2. Results show that implantation into specimens at 150 degree C to 350 degree C is preferable to room temperature implants followed by a separate annealing stage.

引用

页码：1 / 2