Electrical and optical properties of transparent conducting homologous compounds in the indium-gallium-zinc oxide system

被引：51

作者：

Moriga, Toshihiro ^{[1
,3
]}

Kammler, Daniel R. ^{[1
]}

Mason, Thomas O. ^{[1
]}

Palmer, George B. ^{[2
]}

Poeppelmeier, Kenneth R. ^{[2
]}

机构：

[1] Dept. of Mat. Sci. and Engineering, Materials Research Center, Northwestern University, Evanston, IL 60208, United States

[2] Department of Chemistry, Materials Research Center, Northwestern University, Evanston, IL 60208-3113, United States

[3] Dept. of Chem. Sci. and Technology, Faculty of Engineering, Tokushima University, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan

来源：

| 1999年 / American Ceramic Soc, Westerville卷 / 82期

关键词：

Experimental; (EXP);

D O I：

10.1111/j.1151-2916.1999.tb02145.x

中图分类号：

学科分类号：

摘要：

The homologous compounds In1-xGa1+xO3(ZnO)k (where k = 1, 2, or 3) were prepared at a temperature of 1400 °C. The solubility limits (as determined via X-ray diffractometry) were 0.473+ content increased and k decreased. The conductivity increased as k decreased and the In3+ content increased. A maximum conductivity of 250 S/cm was obtained for k = 3 and [In]/([In]+[Ga]) = 1 after reduction. The minimum absorption edge of 325 nm was obtained for k = 2 and [In]/([In]+[Ga]) = 0.35 prior to reduction. The potential for metastable phases in the In-Ga-Zn-O system with enhanced transparent-conducting properties has been discussed.

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