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Ion- implanted MOS technology
被引：8
作者：
DILL HG
BOWER RW
TOOMBS TN
机构：
来源：
Radiation Effects
|
1971年
/
7卷
/
1-2期
关键词：
SEMICONDUCTORS;
Impurities;
-;
TRANSISTOR;
D O I：
10.1080/00337577108232563
中图分类号：
学科分类号：
摘要：
It is shown how impurity doping by non- implantation is used to produce self- aligned MOS gate structures. This paper discusses ion- implantation technology, device design, and circuit performance. A number of implanted circuits are shown. Finally improvements to the present technology which are still in the R & D phase are described.
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页码：45 / 57
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