Ultra low-noise performance of 0.15-micron gate GaAs MESFET's made by direct ion implantation for low-cost MMIC's applications

被引：8

作者：

Feng, M.

Laskar, J.

Kruse, J.

Neidhard, R.

机构：

[1] Department of Electrical and Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, 127 Microelectronics Laboratory. 208 North Wright Street, Urbana, IL 61801, United States

[2] Electronics Laboratory, Wright-Patterson Air Force Base, Dayton, OH, United States

来源：

IEEE Microwave and Guided Wave Letters | 1992年 / 2卷 / 05期

关键词：

Gallium Arsenide MESFET - P-HEMT Noise/Gain Performance;

D O I：

10.1109/75.134352

中图分类号：

学科分类号：

摘要：

The high-speed and noise performance of 0.15-μm gate GaAs MESFETs for microwave and millimeter-wave IC applications is reported. The best extrinsic ft is 109 GHz without correction for pad parasitics, which is equivalent to an intrinsic ft of 134 GHz. The 0.15-μm × 200-μ gate GaAs MESFET achieved a 0.6-dB noise figure with a 17-dB associated gain at 10 GHz and a 0.9-dB noise figure with a 13-dB associated gain at 18 GHz. THe measured noise figure and associated gain are the best reported for GaAs MESFETs and are comparable to the best noise/gain performance of HEMTs and P-HEMTs.

引用

页码：194 / 195