Radiation-induced charge effects in buried oxides with different processing treatments

被引：8

作者：

Pennise, Christine A. ^{[1
]}

Boesch Jr., H.Edwin ^{[1
]}

Goetz, George ^{[1
]}

McKitterick, John B. ^{[1
]}

机构：

[1] U.S. Army Research Lab, Adelphi, United States

来源：

IEEE Transactions on Nuclear Science | 1993年 / 40卷 / 6 pt 1期

关键词：

Bond and etch back silicon on insulator - Buried oxide layer - Charge trapping - Photocurrent response technique - Processing treatments - Radiation induced charge effects - Radiation response - Thermal oxide layer;

D O I：

10.1109/23.273481

中图分类号：

学科分类号：

摘要：

引用

页码：1765 / 1773