CHEMICAL VAPOR DEPOSITED POLYCRYSTALLINE SILICON.

被引：156

作者：

Cowher, M.E.

Sedgwick, T.O.

机构：

来源：

| 1600年 / 119期

关键词：

GRAIN STRUCTURE - MOBILITY;

D O I：

10.1149/1.2404043

中图分类号：

学科分类号：

摘要：

Mirror smooth thin films of polycrystalline silicon suitable for FET device processing have been chemically vapor deposited from silane at 650 C on different insulating materials. Hall mobilities of p-type and n-type films have been measured for carrier concentrations between 10**1**4/cc and 10**2**0/cc. Unusually high mobilities, within a factor of two of bulk silicon, were obtained in the 10**1**4/cc to 10**1**7/cc carrier concentration range. In situ vapor doping control was irreproducible for carrier concentrations below 5 multiplied by 10**1**8/cc. Evidence from radiochemical analysis, electron microscopy, and x-ray analysis indicates that there is a large concentration of electrically inactive dopant which is postulated to be in the grain boundaries. Undoped polysilicon films could be deposited with resistivities greater than 10**6 ohm-cm.

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