EXCHANGE ENERGY FOR CONDUCTION ELECTRONS IN (ZnMn)Se DERIVED FROM SPIN-FLIP RAMAN SCATTERING AND MAGNETIZATION.

被引：37

作者：

Heiman, D. ^{[1
]}

Shapira, Y. ^{[1
]}

Foner, S. ^{[1
]}

机构：

[1] MIT, Francis Bitter Natl Magnet Lab,, Cambridge, MA, USA, MIT, Francis Bitter Natl Magnet Lab, Cambridge, MA, USA

来源：

Solid State Communications | 1984年 / 51卷 / 08期

关键词：

CONDUCTION ELECTRONS - SEMIMAGNETIC SEMICONDUCTORS;

D O I：

10.1016/0038-1098(84)91068-8

中图分类号：

学科分类号：

摘要：

Spin-flip Raman scattering, magnetization, and susceptibility data for Zn//0//. //9//7Mn//0//. //0//T plus are reported. The exchange energy N//o alpha equals 243 plus or minus 10 Mev for the conduction electrons is obtained from an analysis of the Raman and magnetization data. At large magnetic fields (H greater than 60 kOe), the spin-flip energy DELTA E saturates at 14 Mev. At low fields DELTA E does not extrapolate to zero as H yields 0, which is characteristic of scattering from donor-bound electrons. The low temperature magnetization curves are fitted to a modified Brillouin function. The fit gives (x-bar)/x equals 0. 67 as the fraction of active magnetic ions, and an effective temperature T//e//f//f equals T plus T//o with T//o equals 1. 1 K. The magnetic susceptibility follows a Curie-Weiss law between T equals 150 and 280 K with a Curie-Weiss temperature theta equals minus 33 K.

引用

页码：603 / 606