Non-thickness-limited growth of anodic oxide films on valve metals

被引：49

作者：

Melody, Brian ^{[1
]}

Kinard, Tony ^{[1
]}

Lessner, Philip ^{[1
]}

机构：

[1] Kemet Electronics Corp, Greenville, United States

来源：

| 1998年 / IEEE, Piscataway, NJ, United States卷 / 01期

关键词：

Film growth - Glycerol - High temperature effects - Ionic conduction in solids;

D O I：

10.1149/1.1390659

中图分类号：

学科分类号：

摘要：

A method of anodizing valve metals in glycerin-based solutions at elevated temperature to produce nonporous oxide films is presented. The thickness is not limited by the anodizing voltage, but by the amount of time at voltage or, more accurately, by the total amount of ionic current passed through the film. The importance of hydroxyl ion injection to film aging (i.e., the reduction in the level of current passing through a film held at constant voltage) during traditional anodizing is demonstrated.

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