Study of the annealing behaviour of high dose implants in silicon and germanium crystals

The annealing behavior of the implanted layers has been studied with electrical and backscattering methods. The change of the electrical properties is correlated with the reordering process of the implanted layer. The damaged layer in the silicon crystal starts to anneal at 600 degree C and in the germanium crystal at 400 degree C, nearly independent on the ion species. The reordering process itself is dose dependent, even for doses greater than 10**1**6 ions/cm**2. Some of the implanted ions can be found as substitutionals after annealing, like Ge in silicon at 600 degree C and