PHOTOLUMINESCENCE OF HYDROGENATED a-SiNx FILMS.

被引：4

作者：

Fang, Rong-chuan ^{[1
]}

Song, Yi-Zhou ^{[1
]}

Yang, Ming ^{[1
]}

Jiang, Wen-di ^{[1
]}

机构：

[1] Univ of Science & Technology of, China, Hefei Anhui, China, Univ of Science & Technology of China, Hefei Anhui, China

来源：

Journal of Non-Crystalline Solids | 1985年 / 77-78 Dec II卷

关键词：

HYDROGEN INORGANIC COMPOUNDS - PHOTOLUMINESCENCE - SEMICONDUCTING SILICON COMPOUNDS - Hydrogenation;

D O I：

10.1016/0022-3093(85)90809-9

中图分类号：

学科分类号：

摘要：

Photoluminescence spectra of hydrogenated a-Si and a-SiN//x at different preparation condition and annealing temperature are presented. For a-SiN//x:H samples, the spectra exhibit one broad PL peak near 1. 4 ev which shifts to higher energy with increasing concentration of nitrogen in the films. The intensities and peak positions have been measured as a function of nitrogen concentration and annealing temperature. The results are interpreted on the basis of the electronic states created by the bonding of N atoms in the films.

引用

页码：913 / 916