INFLUENCE OF RADIATION DAMAGE (MICROSCOPIC CAUSES) ON THE SENSITIVITY OF AUGER ELECTRON SPECTROSCOPY AND X-RAY PHOTOELECTRON SPECTROSCOPY.

被引:38
作者
Cazaux, Jacques [1 ]
机构
[1] Univ de Reims, Lab de Spectroscopie, des Electrons, Reims, Fr, Univ de Reims, Lab de Spectroscopie des Electrons, Reims, Fr
来源
| 1600年 / 20期
关键词
SPECTROSCOPY; AUGER ELECTRON - SPECTROSCOPY; X-RAY - SURFACES - Radiation Damage;
D O I
10.1016/0378-5963(85)90167-9
中图分类号
学科分类号
摘要
When the spatial resolution of a technique is increased, the dose needed to obtain a given signal has to be increased and damage effects can occur. Consequently, there are three limits for the spatial resolution: those concerning the optics, the available incident flux, and damage to the material tested. First, these three limits in X-ray photoelectron spectroscopy (XPS) and electron-induced Auger electron spectroscopy (e-AES) are analyzed and compared. Then the minimum concentration detectable by XPS and s** minus AES is expressed as a function of the microscopic causes (ionization of atoms and molecules) of the radiation damage (defined by a cross-section Q). The differences between the techniques are strongly reduced, if the two are assumed to have the same spatial resolution. The intrinsic advantage of XPS over e** minus AES is one or two orders of magnitude only if high doses of X-rays are available. A strategy is deduced to perform Auger analysis of sensitive materials.
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