EFFECTS OF DEPOSITION PARAMETERS ON THE GROWTH OF THERMAL OXIDE ON SILICIDES OVER SINGLE CRYSTAL SILICON.

被引：5

作者：

Chu, Wileen ^{[1
]}

Bhandia, Aloke S. ^{[1
]}

Stimmell, James B. ^{[1
]}

机构：

[1] Natl Semiconductor Corp, Central, Services, Santa Clara, CA, USA, Natl Semiconductor Corp, Central Services, Santa Clara, CA, USA

来源：

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 1984年 / 2卷 / 04期

关键词：

SEMICONDUCTOR MATERIALS - Thin Films;

D O I：

10.1116/1.582865

中图分类号：

学科分类号：

摘要：

A crucial criterion for utilizing silicide in MOS technologies is the ability to grow good thermal oxide. Silicides that are deposited or oxidized under nonoptimal conditions produce hazy or nonadherent oxides. The effects of three deposition parameters on subsequent oxide quality of planar magnetron cosputtered films were investigated. These variables are: (1) stoichiometry, (2) substrate bias, and (3) substrate rotation speed. The films were oxidized in steam at 920 degree C for various time intervals. The appearances were determined visually. Oxide thicknesses were obtained. Substrate bias was observed to play a more critical role in oxide quality than the rotational speed. Changes in stoichiometry produced barely noticeable variations in oxide quality unless the films were too metal rich. Voids were not found to be an intrinsic characteristic of the oxide growth.

引用

页码：707 / 709