Microcircuit machining using focused ion beams. A note on the role of SIMS for end point detection

被引：6

作者：

Prewett, P.D. ^{[1
]}

Marriott, P. ^{[1
]}

Bishop, H.E. ^{[1
]}

机构：

[1] SERC Rutherford Appleton Lab, United Kingdom

来源：

Microelectronic Engineering | 1989年 / 10卷 / 01期

关键词：

Integrated Circuits--Masks - Mass Spectrometers--Applications - Metal Cutting--Micromachining - Microelectronics--Machining - Sputtering;

D O I：

10.1016/0167-9317(89)90138-X

中图分类号：

学科分类号：

摘要：

Focused ion beams can be used for micromachining away unwanted material on IC circuits and masks. To prevent damage to underlying structures, accurate determination of the end point of the process is essential. Secondary ion mass spectrometry is a highly sensitive surface analysis technique which could be used for end point detection. An experimental study reveals several difficulties associated mainly with the relatively high energies of beams required for high-resolution micromachining.

引用

页码：1 / 9