Defects at the Si/SiO2 interface: their nature and behaviour in technological processes and stress

被引：86

作者：

Fuessel, W. ^{[1
]}

Schmidt, M. ^{[1
]}

Angermann, H. ^{[1
]}

Mende, G. ^{[1
]}

Flietner, H. ^{[1
]}

机构：

[1] Hahn-Meitner-Inst Berlin, Berlin, Germany

来源：

关键词：

This work was partially supported by the German Ministry of Education and Science under contract no. 0329230A;

D O I：

10.1016/0168-9002(96)00205-7

中图分类号：

学科分类号：

摘要：

引用

页码：177 / 183