ELECTRONIC STRUCTURE OF Si/Si1 - XGeX AND Si/ Si1 - XSnX STRAINED LAYER SUPERLATTICES.

被引：7

作者：

Morrison, Ian ^{[1
]}

Jaros, M. ^{[1
]}

机构：

[1] Univ of Newcastle upon Tyne, Newcastle upon Tyne, Engl, Univ of Newcastle upon Tyne, Newcastle upon Tyne, Engl

来源：

Superlattices and Microstructures | 1986年 / 2卷 / 04期

关键词：

SEMICONDUCTOR MATERIALS - Mathematical Models;

D O I：

10.1016/0749-6036(86)90042-X

中图分类号：

学科分类号：

摘要：

We present a quantitative study of the electronic structure and zone folding in Si/SiGe and Si/SiSn strained layer superlattices. We find that the effect of strain is to increase the degree of electronic confinement and to enhance the optical matrix element across the fundamental superlattice gap, although this latter effect is small in the systems studied.

引用

页码：329 / 333