Optically written waveguides in ion implanted Bi4Ge3O12

被引：11

作者：

Brocklesby, W.S. ^{[1
]}

Field, S.J. ^{[1
]}

Hanna, D.C. ^{[1
]}

Large, A.C. ^{[1
]}

Lincoln, J.R. ^{[1
]}

Shepherd, D.P. ^{[1
]}

Tropper, A.C. ^{[1
]}

Chandler, P.J. ^{[1
]}

Townsend, P.D. ^{[1
]}

Zhang, L. ^{[1
]}

Feng, X.Q. ^{[1
]}

Hu, Q. ^{[1
]}

机构：

[1] Univ of Southampton, Southampton, United Kingdom

来源：

Optical Materials | 1992年 / 1卷 / 03期

关键词：

Crystal structure - Electrooptical effects - Ion implantation - Laser applications - Optical waveguides - Oxides - Raman spectroscopy - Semiconducting bismuth compounds - Spectroscopic analysis;

D O I：

10.1016/0925-3467(92)90026-J

中图分类号：

学科分类号：

摘要：

We report the first observation of optically written channel waveguides in ion implanted Bi4Ge3O12 (BGO). Raman spectroscopy has been used to investigate the changes occurring due to both the original ion implantation and the subsequent optical writing of channel waveguides.

引用

页码：177 / 184