Heteroepitaxial growth of alkali halide thin films on GaAs substrates

被引：18

作者：

Saiki, Koichiro ^{[1
]}

Nakamura, Yuji ^{[1
]}

Koma, Atsushi ^{[1
]}

机构：

[1] Univ of Tokyo, Tokyo, Japan

来源：

Surface Science | 1992年 / 269 pt 70卷 / 1 -3 pt B期

关键词：

Alkali halides - Electron energy loss spectroscopy - Heteroepitaxial growth - Heterostructures - Reflection high energy electron diffraction (RHEED);

D O I：

10.1016/0039-6028(92)91350-K

中图分类号：

学科分类号：

摘要：

The growth of alkali halide has been examined on GaAs(111)A, (111)B and (001) substrates. NaCl with a misfit of 0.4% with respect to GaAs grows epitaxially on those GaAs substrates for substrate temperatures between 150°C and 250°C. In the case of growth on (001), the crystallographic axes align with those of the substrate and the grown film always has a flat surface. In the case of growth on (111), the crystallographic orientation of the grown NaCl differs by 180° between the (111)A and (111)B faces and the surface of the grown films consists of triangular pyramids with three {001} faces. From those results, a simple model for NaCl/GaAs(111) heterostructures is proposed.

引用

页码：790 / 796