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Lattice location and dopant behavior of group II and VI elements implanted in silicon
被引：17
作者：
Gyulai, J.
[1
,2
]
Meyer, O.
[1
,3
]
Pashley, R.D.
[1
]
Mayer, J.W.
[1
]
机构：
[1] California Institute of Technology, Pasadena,CA,91109, United States
[2] Inst. Exper. Phys., Univ. of Szeged, Hungary
[3] Inst. für Angewandte Kernphysik, Kernforschungszentrum, Karlsruhe, Germany
来源：
Radiation Effects
|
1971年
/
7卷
/
1-2期
关键词：
SEMICONDUCTORS;
Diffusion;
-;
Electric Properties - SEMICONDUCTORS;
Impurities;
Thermal Properties;
D O I：
10.1080/00337577108232560
中图分类号：
学科分类号：
摘要：
Outdiffusion, lattice location and electrical behavior of Zn, Cd, Hg and Se, Te implanted into silicon at 50 kev were investigated by backscattering and channeling effect of 1 Mev HeU ions and by Hall effect and sheet resistivity measurements. All the species exhibited outdiffusion with thermal processing.
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页码：17 / 24
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