Deposition process based on organosilicon precursors in dielectric barrier discharges at atmospheric pressure-A comparison

被引：118

作者：

Sonnenfeld, A. ^{[1
]}

Tun, T.M. ^{[1
]}

Zajíčková, L. ^{[2
]}

Kozlov, K.V. ^{[3
]}

Wagner, H.-E. ^{[1
]}

Behnke, J.F. ^{[1
]}

Hippler, R. ^{[1
]}

机构：

[1] Institut fur Physik, Ernst-Moritz-Arndt-Universitat, Greifswald, Germany

[2] Department of Phys. Electronics, Masaryk University, Brno, Czech Republic

[3] Department of Chemistry, Moscow State University, 119899 Moscow, Russia

来源：

Plasmas and Polymers | 2001年 / 6卷 / 04期

关键词：

Deposition - Fourier transform infrared spectroscopy - Gas chromatography - X ray photoelectron spectroscopy;

D O I：

10.1023/A:1014414016164

中图分类号：

学科分类号：

摘要：

Dielectric barrier discharges (DBD) at atmospheric pressure are presented as a tool to create organosilicon deposits on technical planar aluminium substrates (up to 15 × 8 cm2) by admixing small amounts of hexamethyldisiloxane (HMDSO) and tetraethoxysilane (TEOS) to the carrier gas of the discharges. Using barrier materials of different specific capacities (2.6 × 104 and 3.2 pF/cm2) in two electrode arrangements operated at less than 1 W, the influence of the filament properties on the deposition is studied. In comparison to these arrangements, a third electrode setup with a barrier of the specific capacity of 2.9 pF/cm2 is operated at approximately 50 W to study the influence of the specific energy of the plasma (energy per molecule) on the deposition process. The plasma chemical process was studied qualitatively by Gas Chromatography, and properties of the plasma-treated substrates were examined by means of X-ray Photoelectron Spectroscopy (XPS), Fourier Transform Infrared (FTIR) spectroscopy, as well as visually.

引用

页码：237 / 266