EFFECT OF GROWTH TEMPERATURE ON THE PHOTOLUMINESCENT SPECTRA OF UNDOPED AlGaAs GROWN BY METALORGANIC-CHEMICAL VAPOR DEPOSITION.

被引：4

作者：

Mohammed, Khalid ^{[1
]}

Merz, James L. ^{[1
]}

Kasemset, Dumrong ^{[1
]}

机构：

[1] Univ of California, Santa Barbara,, Dep of Electrical & Computer, Engineering, Santa Barbara, CA, USA, Univ of California, Santa Barbara, Dep of Electrical & Computer Engineering, Santa Barbara, CA,

来源：

Materials Letters | 1983年 / 2卷 / 01期

关键词：

ORGANOMETALLICS - Decomposition - PHOTOLUMINESCENCE - SEMICONDUCTING ALUMINUM COMPOUNDS - Growth - SEMICONDUCTOR MATERIALS - Spectroscopic Analysis;

D O I：

10.1016/0167-577X(83)90027-7

中图分类号：

学科分类号：

摘要：

The epitaxial growth of GaAs and AlGaAs by metalorganic-chemical vapor deposition (MO-CVD) has been widely used for the fabrication of a variety of devices. A detailed investigation of the effect of substrate growth temperature on the optical properties of AlGaAs grown by metalorganic-chemical vapor deposition is reported, using room- and low-temperature photoluminescence. A monotonic increase in band-to-band photoluminescence is observed as the growth temperature is increased from 700 to 800 degree C. At the same time, however, an increase in the incorporation of C and Ge acceptors is observed.

引用

页码：35 / 38