OBSERVATION OF PHASE SEPARATION IN (Ge2)x(GaAs)1 - x ALLOYS GROWN BY MOLECULAR BEAM EPITAXY.

被引：6

作者：

Indrajit, Banerjee ^{[1
]}

Kroemer, Herbert ^{[1
]}

Chung, Don W. ^{[1
]}

机构：

[1] Univ of California, Santa Barbara,, Dep of Electrical & Computer, Engineering, Santa Barbara, CA, USA, Univ of California, Santa Barbara, Dep of Electrical & Computer Engineering, Santa Barbara, CA,

来源：

Materials Letters | 1984年 / 2卷 / 03期

关键词：

CRYSTALS - Epitaxial Growth - ELECTRIC CONTACTS; OHMIC; -; Materials; MICROSCOPES; ELECTRON - Applications - OPTOELECTRONIC DEVICES - Materials;

D O I：

10.1016/0167-577X(84)90021-1

中图分类号：

学科分类号：

摘要：

(Ge//2)//x(GaAs)//1// minus //x alloys with 0 less than x less than 1 have been grown by molecular beam epitaxy on various Ge and GaAs substrates. The structure of these alloys has been studied using transmission electron microscopy. In all cases studied, Ge tends to phase-separate from GaAs, with the Ge domain size ranging from 100 to 300 A. These alloys are potentially useful for fabrication of optoelectronic devices in the infrared region and for making ohmic contacts.

引用

页码：189 / 193