INFRARED SPECTRA OF AMORPHOUS SiNx:H FILMS.

被引：3

作者：

Fang, Rong-chuan ^{[1
]}

Song, Yi-zhou ^{[1
]}

Yang, Ming ^{[1
]}

Jiang, Wen-di ^{[1
]}

机构：

[1] Univ of Science & Technology of, China, Hefei Anhui, China, Univ of Science & Technology of China, Hefei Anhui, China

来源：

Journal of Non-Crystalline Solids | 1985年 / 77-78 Dec II卷

关键词：

INFRARED RADIATION - SEMICONDUCTING FILMS - Amorphous - SEMICONDUCTING SILICON COMPOUNDS - Amorphous - SILICON AND ALLOYS - Hydrogenation;

D O I：

10.1016/0022-3093(85)90854-3

中图分类号：

学科分类号：

摘要：

Infrared absorption spectra of two series of a-SiN//x:H samples prepared by glow discharge in the gas mixtures of SiH//4 plus N//2 plus H//2, and SiCl//4 plus N//2 plus H//2 have been measured. The Si-N bond vibration absorption at 840 cm** minus **1 has been observed for both of the two series of samples, but H-N bond absorption appears at 3000, 1390 cm** minus **1 only for films prepared from SiCl//4. The nitrogen content has been determined by IR spectroscopy as a function of substrate temperature, gas flow rate, and annealing temperatures. Two possible configurations of N atoms in the films could be deduced from the measurements.

引用

页码：1117 / 1120