ENERGY LEVELS IN ELECTRON IRRADIATED N-TYPE GERMANIUM.

被引：20

作者：

Mooney, P.M.

Cherki, M.

Bourgoin, J.C.

机构：

来源：

| 1979年 / 40卷 / 02期

关键词：

Compendex;

D O I：

10.1051/jphyslet:0197900400201900

中图分类号：

学科分类号：

摘要：

Deep levels introduced by room temperature 1 MeV electron irradiation in p plus n photodiodes have been studied using deep level transient spectroscopy. Two electron traps and one hole trap have been observed after irradiation. A second hole trap is observed upon the annealing of the first hole trap. The energy levels associated with these traps, their cross-sections and their annealing behaviour have been determined.

引用

页码：l19 / l22

页数：3