CHARACTERIZATION OF STRESS IN THE ABSORBER OF X-RAY MASKS USING A HOLOGRAPHIC TECHNIQUE.

被引：4

作者：

Acosta, R.E. ^{[1
]}

Wilson, A.D. ^{[1
]}

Powers, J.V. ^{[1
]}

机构：

[1] IBM, T. J. Watson Research Cent,, Yorktown Heights, NY, USA, IBM, T. J. Watson Research Cent, Yorktown Heights, NY, USA

来源：

Microelectronic Engineering | 1985年 / 3卷 / 1-4期

关键词：

FILMS; -; Metallic; INTERFEROMETRY; HOLOGRAPHIC; STRESSES; Measurements;

D O I：

10.1016/0167-9317(85)90070-X

中图分类号：

学科分类号：

摘要：

The distortion of X-ray masks is directly related to the stress of the absorber used. Because of this, it is very important to be able to determine the value of the absorber stress in order to be able to control, or reduce, the distortion of the masks. A simple technique, double exposure holographic interferometry, is described. Its application in measuring the stress of electrodeposited gold films, and the effect that several deposition parameters have on the gold stress are described.

引用

页码：573 / 579